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| SD0103WS SILICON SCHOTTKY BARRIER DIODE Features * Low forward voltage drop and suitable for high effifiency rectifying * Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 YF Top View Marking Code: "YF" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Mean Rectifying Current Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine Wave) Junction Temperature Storage Temperature Range Symbol VRRM IO IFSM Tj Ts Value 30 100 1 125 - 55 to + 125 Unit V mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 30 V Symbol VF IR Max. 0.44 50 Unit V A SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/11/2007 SD0103WS SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/11/2007 SD0103WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.00 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 01/11/2007 |
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